Interrelation between the Parameters of Chemical Vapor Deposition,Properties,and Structure of Borophosphosilicate Glass Films Used in the Silicon Integrated Circuit Technology

摘要

The results of investigations into the processes occurring in the course of the synthesis,the physicochemical properties,and the compositions of thin borophosphosilicate glass films with phosphorus and boron at a total content up to 30 wt% are generalized.The films are prepared using four chemical vapor deposition methods at deposition temperatures ranging from 380 to 520 deg C,followed by heat treatment at temperatures of 700-950 deg C.It is demonstrated that the substantial differences in the properties of the glass films studied can be explained by two factors.The first factor is associated with the porosity of glass films and the occurrence of boron atoms in the threefold coordination with respect to oxygen in the glass.The second factor involves the total content of phosphorus and boron oxides,the concentration of phosphorus oxide clusters embedded into the glass structure,and their sizes.A novel approach is proposed for the characterization of the chemical stability of thin glass films sued in the technology of silicon integrated circuits.