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Photoluminescence in MgO-ZnO Nanorods Enhanced by Hydrogen Plasma Treatment

机译:氢等离子体处理增强MgO-ZnO纳米棒中的光致发光

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摘要

MgO nanorods were fabricated by the thermal evaporation of MgsN2. The influence of ZnO sheathing and hydrogen plasma exposure on the photoluminescence (PL) of the MgO nanorods was studied. PL measurements of the ZnO-sheathed MgO nanorods showed two main emission bands: the near band edge emission band centered at -380 ran and the deep level emission band centered at -590 nm both of which are characteristic of ZnO. The near band edge emission from the ZnO-sheathed MgO nanorods was enhanced with increasing the ZnO shell layer thickness. The near band edge emission from the ZnO-sheathed MgO nanorods appeared to be enhanced further by hydrogen plasma irradiation. The underlying mechanisms for the enhancement of the NBE emission from the MgO nanorods by ZnO sheathing and hydrogen plasma exposure are discussed.
机译:通过热蒸发MgsN2制备MgO纳米棒。研究了ZnO包覆和氢等离子体暴露对MgO纳米棒的光致发光(PL)的影响。 ZnO包覆的MgO纳米棒的PL测量显示两个主要的发射带:以-380 nm为中心的近带边缘发射带和以-590 nm为中心的深能级发射带,这两个都是ZnO的特征。 ZnO包覆的MgO纳米棒的近带边缘发射随ZnO壳层厚度的增加而增强。 ZnO包覆的MgO纳米棒的近带边缘发射似乎通过氢等离子体辐照得到进一步增强。讨论了通过ZnO包覆和氢等离子体暴露增强MgO纳米棒NBE发射的基本机理。

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