Promising Materials for an Electronic Component Base Used to Create Terahertz Frequency Range (0.5–5.0 THz) Generators and Detectors

摘要

A THz transistor based on a metamorphic nanoheterostructure with generation frequency f_(max) = 0.63 THz and a zigzag-shaped gate L_g = 46 nm long is developed. A series of low-temperature GaAs structures are produced, and photoconductive antennas with generation frequencies above 1.5–2 THz are developed on their basis.