Ion mixing in multilayer films and the doping of the near-surface layers of polycrystalline substrates under irradiation by ion beams with a wide energy spectrum

摘要

Various factors influencing ion mixing efficiency are considered. It is established that the energy transfer from ions and primary knocked-on atom films to subsequent displacement cascades underlies the penetration of atoms from multilayer films into a polycrystalline substrate. The penetration of implanted atoms to great depths is in this case determined by the defect density, the radiation induced migration of the implanted atoms, and their interaction with the atoms of the matrix. All of these factors can be described in terms of the isotropic mixing model. It is shown that when doped by atoms from multilayer films, gradient layers form that are determined by the range of radiation in the substrate of the atoms to be implanted and their migration under irradiation by an ion beam with a wide range of energies.