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Swift heavy ion irradiation effect on Cu-doped CdS nanocrystals embedded in PMMA

机译:快速重离子辐照对嵌入PMMA的Cu掺杂CdS纳米晶体的影响

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摘要

Semiconductor nanocrystals (NCs) have received much interest for their optical and electronic properties. When these NCs dispersed in polymer matrix, brightness of the light emission is enhanced due to their quantum dot size. The CdCuS NCs have been synthesized by chemical route method and then dispersed in PMMA matrix. These nanocomposite polymer films were irradiated by swift heavy ion (SHI) (100 MeV, Si~(+7) ions beam) at different fluences of 1 × 10~(10) and 1 × 10~(12) ions/cm~2 and then compared their structural and optical properties by XRD, atomic force microscopy, photoluminescence, and UV-Vis spectroscopy before and after irradiation. The XRD spectra showed a broad hump around 2θ ≈ 11.83° due to amorphous PMMA and other peaks corresponding to hexagonal structure of CdS nanocrystals in PMMA matrix. The photoluminescence spectra shows a broad peak at 530 nm corresponding to green emission due to Cu impurities in CdS. The UV-Vis measurement showed red shift in optical absorption and bandgap changed from 4-38-3-60 eV as the irradiation fluency increased with respect to pristine CdCuS nanocomposite polymer film.
机译:半导体纳米晶体(NCs)的光学和电子特性引起了人们的极大兴趣。当这些NC分散在聚合物基质中时,由于它们的量子点尺寸,发光的亮度提高了。 CdCuS NCs是通过化学路线方法合成的,然后分散在PMMA基质中。用快速重离子(SHI)(100 MeV,Si〜(+7)离子束)以1×10〜(10)和1×10〜(12)离子/ cm〜2的不同通量辐照这些纳米复合聚合物薄膜。然后通过XRD,原子力显微镜,光致发光和UV-Vis光谱比较它们的结构和光学性质。由于无定形的PMMA和其他与PMMA基质中CdS纳米晶体的六边形结构相对应的峰,XRD谱显示在2θ≈11.83°附近有一个宽峰。由于CdS中的铜杂质,光致发光光谱在530 nm处显示一个宽峰,对应于绿色发射。 UV-Vis测量显示,相对于原始CdCuS纳米复合聚合物薄膜,随着辐射通量的增加,光吸收的红移和带隙从4-38-3-60 eV改变。

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