首页> 外文期刊>Bulletin of Materials Science >Structure and properties of (1-x)[(K0.5Na0.5)NbO3-LiSbO3]- xBiFe(0.8)Co(0.2)O(3) lead-free piezoelectric ceramics
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Structure and properties of (1-x)[(K0.5Na0.5)NbO3-LiSbO3]- xBiFe(0.8)Co(0.2)O(3) lead-free piezoelectric ceramics

机译:(1-x)[(K0.5Na0.5)NbO3-LiSbO3]-xBiFe(0.8)Co(0.2)O(3)无铅压电陶瓷的结构和性能

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摘要

Lead-free piezoelectric ceramics (1 - x)[0.95(K0.5Na0.5)NbO3-0.05LiSbO(3)]-xBiFe(0.8)Co(0.2)O(3)(KNN-LS-xBFC) were prepared by a conventional sintering technique. The effect of BFC content on the structure, piezoelectric and electrical properties of KNN-LS ceramics was investigated. The results reveal that the BFC is effective in promoting the sinterability and the electrical properties of the ceramics sintering at low temperature of 1030A degrees C. The ceramics show a single perovskite structure, in which the tetragonal phase decreases while the orthorhombic phase increases with the increase of x. The more the BFC content is, the smaller and homogeneous grains were formed. With the increase of x, the d (33) and the k (p) increase to a maximum value and then slightly decrease, but the Q (m) increases continuously. As BFC content increases, the Curie temperature T (c) and remnant polarization P (r) decrease, but the diffusivity of phase transition in KNN-LS ceramics will intensify and the coercive field E (c) fluctuate between 1.16 and 1.51 kV mm (-1) . The samples with x = 0.004 exhibit optimum electrical properties at room temperature (d (33) =268 pC N-1, k (p) = 52%, epsilon (r) = 1366, tan delta = 2.11%, T (c) = 325A degrees C, P (r) = 20.4 mu C cm(-2), E (c) = 1.16 kV mm(-1)).
机译:通过制备无铅压电陶瓷(1-x)[0.95(K0.5Na0.5)NbO3-0.05LiSbO(3)]-xBiFe(0.8)Co(0.2)O(3)(KNN-LS-xBFC)传统的烧结技术。研究了BFC含量对KNN-LS陶瓷结构,压电性能和电性能的影响。结果表明,BFC有效地促进了陶瓷在1030A℃低温下的烧结性和电学性能。陶瓷表现出单一的钙钛矿结构,其中四方晶相减少而正交晶相随增加而增加的x。 BFC含量越高,形成的晶粒越小且均匀。随着x的增加,d(33)和k(p)增大到最大值,然后略有下降,但Q(m)连续增加。随着BFC含量的增加,居里温度T(c)和残余极化P(r)降低,但是KNN-LS陶瓷中相变的扩散性将增强,矫顽场E(c)在1.16和1.51 kV mm( -1)。 x = 0.004的样品在室温下表现出最佳的电性能(d(33)= 268 pC N-1,k(p)= 52%,ε(r)= 1366,tanδ= 2.11%,T(c) = 325A摄氏度,P(r)= 20.4μC cm(-2),E(c)= 1.16 kV mm(-1))。

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