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首页> 外文期刊>Bulletin of Materials Science >Study on electrical properties of Ni-doped SrTiO_3 ceramics using impedance spectroscopy
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Study on electrical properties of Ni-doped SrTiO_3 ceramics using impedance spectroscopy

机译:阻抗谱研究掺Ni SrTiO_3陶瓷的电学性能

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The ceramics, SrTiO_3 (ST) and 0.4, 0.8 atom percent Ni doped SrTiO_3, were prepared by solid state reaction route. The average grain size of undoped and doped samples was measured and found to be 1.2,1.9 and 3.7 mu m, respectively. The impedance measurements were conducted at 400-600 deg C to separate grain and grain boundary contributions. The grain and grain boundaries relaxation frequencies were shifted to higher frequency with temperature. Bulk resistance of doped and undoped ST ceramics was more or less the same. Single grain boundary resistance of doped sample was higher than that of undoped one, indicating that GB resistance increases with acceptor doping. Activation energies were calculated to confirm the same,
机译:通过固态反应路线制备了陶瓷SrTiO_3(ST)和0.4、0.8原子百分比的Ni掺杂的SrTiO_3。测量未掺杂和掺杂样品的平均晶粒尺寸,分别为1.2、1.9和3.7μm。阻抗测量是在400-600摄氏度下进行的,以分离晶粒和晶界贡献。随着温度的升高,晶粒和晶界的弛豫频率向更高的频率移动。掺杂和未掺杂的ST陶瓷的体电阻大致相同。掺杂样品的单晶界电阻高于未掺杂样品的晶界电阻,表明GB电阻随受体掺杂而增加。计算活化能以确认相同,

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