Monte Carlo study of terahertz radiation from InAs

摘要

In this paper we investigated the THz radiation dynamics in InAs using the ensemble Monte Carlo method. Our simulations indicated that THz pulse shapes (temporal waveforms) are closely related with the pump laser fluence. The sharp, negative peak of a THz pulse may result from the electron intervalley transfers from center valley to satellite valleys. Our numerical results show that higher laser fluence is an advantage in enhancing the output of high frequency components. The spato-temporal distributions of photo-Dember fields on the semiconductor surface were also analyzed.