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A comparison between tetragonal-rhombohedral and tetragonal-orthorhombic phase boundaries on piezoelectricity enhancement

机译:四方菱形和四方斜方晶界在压电增强方面的比较

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We made a detailed comparison of physical properties between the tetragonal-rhombohedral (T-R) phase boundary (in the Ba(SnTi)O_(3-x)(BaCa)TiO_3 system) and the tetragonal-orthorhombic (T-O) phase boundary (in the Ba(Sn_xTi_(1x))O_3 system). The contrasting results suggest that the T-R phase boundary enhances the piezoelectricity more significantly than the T-O phase boundary. Such difference is considered to stem from the dissimilar anisotropy for polarization rotation, the different elastic softening and the different domain wall contribution between T-R and T-O phase boundaries.
机译:我们详细比较了四方-菱面体(TR)相界(在Ba(SnTi)O_(3-x)(BaCa)TiO_3系统中)和四方-斜方晶(TO)相界(在Ba(Sn_xTi_(1x))O_3系统)。对比结果表明,T-R相界比T-O相界更明显地增强了压电性。这种差异被认为是由于极化旋转的各向异性不同,弹性软化的不同以及T-R和T-O相界之间的畴壁贡献不同所致。

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