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Semicircle: An exact relation in the integer and fractional quantum Hall effect

机译:半圆:整数和分数量子霍尔效应的精确关系

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We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the quantum unit of resistance, h/e~2. The measurements were performed in a two-dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field is increased above the V = 1 quantum Hall state. This quantization leads to a nearly perfect semicircle relation for the diagonal and Hall conductivities. Similar results are obtained with a higher-mobility n-type modulation-doped GaAs/AlGaAs sample, when the magnetic field is increased above the V = 1/3 fractional quantum Hall state.
机译:我们在二维空间上介绍了量化霍尔绝缘子的实验结果。这种具有消失的电导率的绝缘体的特征在于,以电阻的量子单位h / e〜2为单位对霍尔电阻进行量化(在实验精度范围内)。当磁场增加到V = 1量子霍尔状态以上时,在封闭在Ge / SiGe量子阱中的二维空穴系统中进行测量。这种量化导致对角线和霍尔电导率几乎达到完美的半圆关系。当磁场增加到V = 1/3分数量子霍尔状态以上时,使用迁移率更高的n型调制掺杂GaAs / AlGaAs样品可获得相似的结果。

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