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An experimental technique to determine critical stress intensity factors for delamination initiation

机译:确定分层起始临界应力强度因子的实验技术

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摘要

Interfacial delamination is an important reliability concern in multilayered microelectronic packages. Local asymptotic solutions, based on linear elastic assumptions, are available for estimating the free-edge stress intensity factory (SIF). However, to be able to predict delamination initiation, it is necessary to determine the critical free-edge SIF. In this paper, an experimental method has been proposed and conducted to determine the critical free-edge SIF. The test is based on the simple and standard shear strength test, which is well specified by ASTM standard for surface mount components, as opposed to specially designed or complicated test apparatus and fixture. The critical free-edge SIF for copper/ViaLux~(TM) 81 photo-definable dry film PDDF interface has been determined with the proposed test method and calibrated using finite element analysis.
机译:界面分层是多层微电子封装中重要的可靠性问题。基于线性弹性假设的局部渐近解可用于估计自由边缘应力强度工厂(SIF)。但是,为了能够预测分层的开始,必须确定关键的自由边缘SIF。在本文中,已经提出并进行了确定临界自由边缘SIF的实验方法。该测试基于简单和标准的剪切强度测试,相对于专门设计或复杂的测试设备和固定装置,该测试标准由ASTM标准针对表面安装组件进行了详细说明。铜/ ViaLuxTM 81光可定义干膜PDDF界面的临界自由边缘SIF已通过建议的测试方法进行了确定,并使用有限元分析进行了校准。

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