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Preparation of boron-doped diamond nanowires and their application for sensitive electrochemical detection of tryptophan

机译:硼掺杂金刚石纳米线的制备及其在色氨酸敏感电化学检测中的应用

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The paper reports on the fabrication and electrochemical investigation of boron-doped diamond nanowires (BDD NWs) electrodes. The nanowires were obtained directly from highly doped polycrystalline diamond substrates using reactive ion etching (RIE) with oxygen plasma. The technique does not require any complicated processing steps such as mask deposition or template removal. The influence of the surface state on the electrochemical characteristics is discussed. The interface with the most favourable electrochemical response is investigated for the detection of tryptophan using differential pulse voltammetry. A detection limit of 5 x 10(-7) M was obtained on oxidized BDD NWs, as compared to 1 x 10(-5) M recorded on planar oxidized boron-doped diamond interfaces.
机译:该论文报道了掺硼金刚石纳米线(BDD NWs)电极的制备和电化学研究。使用具有氧等离子体的反应性离子蚀刻(RIE),可从高掺杂多晶金刚石基板直接获得纳米线。该技术不需要任何复杂的处理步骤,例如掩模沉积或模板去除。讨论了表面状态对电化学特性的影响。研究了具有最佳电化学响应的界面,用于使用差分脉冲伏安法检测色氨酸。与在平面氧化硼掺杂的金刚石界面上记录的1 x 10(-5)M相比,在氧化的BDD NW上获得的检出限为5 x 10(-7)M。

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