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Photocatalytic activity and electron field emission of necked ZnO:Bi nanowires

机译:颈ZnO:Bi纳米线的光催化活性和电子场发射

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Bismuth-doped ZnO nanowires were synthesized by a vapor transfer process at 600°C. Raman spectra revealed that a slight blueshift occurred in ZnO:Bi (438 cm~(-1)) nanowires in contrast to ZnO (436 cm~(-1)) nanowires. The X-ray photoelectron spectrum showed that the ZnO:Bi nanowires contained the Bi dopant as Bi~0 and Bi~(3+). The turn-on fields of the ZnO:Bi and ZnO nanowires were ~4.19 and 6.57 V/μm, respectively. Because the ZnO:Bi nanowires exhibited a redshift of absorbance spectrum with a high ratio in the UV range, the photocatalytic activities of ZnO:Bi nanowires were considered superior to those of ZnO nanowires.
机译:铋掺杂的ZnO纳米线是通过600°C的气相转移过程合成的。拉曼光谱表明,与ZnO(436 cm〜(-1))纳米线相比,ZnO:Bi(438 cm〜(-1))纳米线发生了轻微的蓝移。 X射线光电子能谱表明,ZnO:Bi纳米线含有Bi掺杂剂Bi〜0和Bi〜(3+)。 ZnO:Bi和ZnO纳米线的开启场分别为〜4.19和6.57 V /μm。因为ZnO:Bi纳米线在紫外线范围内具有高比率的吸收光谱的红移,所以ZnO:Bi纳米线的光催化活性被认为优于ZnO纳米线。

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