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Optimization of the Photoluminescence Properties of Electrodeposited Y_2O_3: Eu~(3+) Thin-Film Phosphors

机译:电沉积Y_2O_3:Eu〜(3+)薄膜荧光粉的光致发光性能优化

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摘要

In this work, electrodeposition is proved to be a promising method to prepare Y_2O_3:Eu~(3+) thin-film phosphors. The photoluminescence (PL) property of the Y_2O_3:Eu~(3+) thin-film phosphor strongly depends on different factors such as the crystal structure of host materials, annealing temperature, and doping concentration of Eu3+. The best PL performance of the Y_2O_3:Eu~(3+) thin-film phosphor is achieved for a sample annealed at 600℃ with a Eu~(3+) doping concentration of 1.85 atom%.
机译:在这项工作中,电沉积被证明是制备Y_2O_3:Eu〜(3+)薄膜荧光粉的一种有前途的方法。 Y_2O_3:Eu〜(3+)薄膜荧光粉的光致发光(PL)特性强烈取决于不同的因素,例如主体材料的晶体结构,退火温度和Eu3 +的掺杂浓度。 Y_2O_3:Eu〜(3+)薄膜荧光粉的最佳PL性能是在Eu〜(3+)掺杂浓度为1.85%(原子)的条件下于600℃退火的样品获得的。

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