Aluminum-induced crystallization of amorphous silicon (a-Si) was used to rapidly grow aluminum-doped silicon nanowires (SiNWs) that are parallel to the substrate surfaces on which they are grown. The study reveals that both aluminum thickness and native silicon oxide between Al and a-Si play critical roles in the formation of the nanostructures. The research results suggest that the rapid in-plane growth of these SiNWs can be attributed to self-assembly of nanosilicon islands, which is different from traditional SiNWs growth mechanisms such as vapor-liquid-solid.
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