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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Crystallized Indium-Tin Oxide (ITO) Thin Films Grown at Low Temperature onto Flexible Polymer Substrates
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Crystallized Indium-Tin Oxide (ITO) Thin Films Grown at Low Temperature onto Flexible Polymer Substrates

机译:低温在柔性聚合物基板上生长的结晶铟锡氧化物(ITO)薄膜

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Facial off-axis sputtering was used to crystallize in situ-grown ITO films onto a polyethylene terephthalate (PET) substrate at 120°C. The process caused no mechanical damage to the substrate. The 100-nm-thick crystalline ITO films showed a resistivity of about 4.2 ×10~4 Ω-cm and a transmittance of about 83% at a wavelength of 550 nm. The crystallized ITO films showed an improved mechanical durability compared with the amorphous ITO films. The integration of a 30-nm-thick amorphous SiO_2 layer onto ITO/PET maintains the resistivity of the ITO films and exhibits an improvement in the transmittance of about 86% compared with the crystalline ITO films. The amorphous SiO_2 layer did not adversely affect the mechanical durability of either the crystalline ITO or the amorphous ITO films grown onto the PET. The crystalline ITO films on flexible polymer substrates are indispensable for the mechanical durability of flexible touch screens.
机译:使用偏轴溅射在120°C下将原位生长的ITO膜结晶到聚对苯二甲酸乙二醇酯(PET)基板上。该过程对衬底没有造成机械损坏。厚度为100 nm的结晶ITO膜在550 nm波长下的电阻率约为4.2×10〜4Ω-cm,透射率约为83%。与非晶ITO膜相比,结晶的ITO膜显示出改善的机械耐久性。与结晶ITO膜相比,将厚度为30 nm的非晶SiO_2层集成到ITO / PET上可保持ITO膜的电阻率,并且透射率提高了约86%。非晶态SiO_2层不会对结晶ITO或生长在PET上的非晶态ITO膜的机械耐久性产生不利影响。柔性聚合物基板上的结晶ITO膜对于柔性触摸屏的机械耐久性是必不可少的。

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