机译:用于 40nm CMOS 封装 5G 手机相控阵的宽带 28GHz 发射-接收前端
Texas A&M Univ, Analog & Mixed Signal Ctr, Dept Elect & Comp Engn, College Stn, TX 77843 USA;
Qualcomm Inc, San Diego, CA 92121 USA;
Balun; carrier aggregation; CMOS; EVM; fifth-generation (5G); front-end (FE); handset; low-noise amplifier (LNA); millimeter-wave (mm-Wave); OFDM; power amplifier (PA); phase shifter (PS); phased array; TR switch; 28 GHz;
机译:A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in 28-nm CMOS
机译:A 28-GHz Four-Channel Beamforming Front-End IC With Dual-Vector Variable Gain Phase Shifters for 64-Element Phased Array Antenna Module
机译:Area-Efficient 28-GHz Four-Element Phased-Array Transceiver Front-End Achieving 25.2#x0025; Tx Efficiency at 15.68-dBm Output Power
机译:一个28-GHz波段高效的线性功率放大器,具有56 nm CMOS SOI的5G移动通信的新型自适应偏置电路
机译:一种28-GHz CMOS相位阵列波束形成器利用支持双极化MIMO的中和双向技术,用于5G NR