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Josephson effect in graphene SNS junction with a single localized defect

机译:具有单个局部缺陷的石墨烯SNS结中的约瑟夫森效应

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摘要

Imperfections change essentially the electronic transport properties of graphene. Motivated by a recent experiment reporting on the possible application of graphene as junctions, we study transport properties in graphene-based junctions with single localized defect. We solve the Dirac-Bogoliubovde-Gennes equation with a single localized defect superconductor-normal(graphene)- superconductor (SNS) junction. We consider the properties of tunneling conductance and Josephson current through an undoped strip of graphene with heavily doped s-wave superconducting electrodes in the limit l_(def) ?L ?ξ We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk and the minimum tunneling conductance remains the same. The Josephson junction exhibits sign oscillations.
机译:缺陷从根本上改变了石墨烯的电子传输特性。受最近一项关于石墨烯作为结的可能应用的实验报告的启发,我们研究了具有单个局部缺陷的石墨烯基结中的传输特性。我们用单个局域缺陷超导体-正态(石墨烯)-超导体(SNS)结求解Dirac-Bogoliubovde-Gennes方程.我们考虑了隧穿电导和约瑟夫森电流通过具有重掺杂 s 波超导电极的未掺杂石墨烯条带的性质 l_(def) ?L ?ξ 我们发现,在体中存在单个局部缺陷的情况下,安德烈耶夫束缚态的谱被修改,并且最小隧穿电导保持不变。约瑟夫森结表现出符号振荡。

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