To Enhance Performance of Light Soaking Process on ZnS/CuIn_(1-x)Ga_xSe_2 Solar Cell

摘要

The ZnS/CuInGaSe_2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS_2 phase was also found in the CuInGaSe_2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8Ω. The efficiency of the devices improved from 8.12 to 9.50%.