Photoresistors with the gray code on the Cd (x) Hg1-x Te heteroepitaxial structures for a spectral interval of 2-11 mu m with thermoelectric cooling

摘要

Photoresistors with thermoelectric cooling of photosensitive elements are developed in the topology of the five-digit Gray code using the Cd (x) Hg1-x Te heteroepitaxial structures produced with the aid of molecular-beam epitaxy. The photoresistors can be used to detect pulsed laser radiation with a wavelength of 10.6 mu m. The dependence of the signal-to-noise ratio on the composition of the narrow-band-gap working layer of the epitaxial structure and the structure of the photoresistor is studied.