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The superstructure of semiconducting SmTe2-x

机译:半导体SmTe2-x的上层结构

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SmTe1.84 was synthesized and the crystal structure was studied by the single-crystal technique. The substructure was isostructural with LaTe2-x, where corrugated rock salt LaTe slabs alternate with planar tellurium square lattices. The substructure of SmTe1.84 is tetragonal anti-Cu2Sb type and the superstructure is root 5x root 5 of the tetragonal subcell. The superstructure is tetragonal, with P4(2) symmetry, a = 9.709(1) Angstrom and c = 18.007(7) Angstrom. There are both ordered and disordered defects in the Te sheet. The superstructure obtained consists of the three possible stable solutions suggested by Lee and Foran, and all three solutions were found in a single crystal. The resistivity dependence on temperature indicates that SmTe1.84 is semiconducting, which seems due to structural modulation. The structural stability of the other phases of SmTen (n = 1-2) is discussed in terms of temperature and ionic radius ratio. (C) 1998 Academic Press. [References: 26]
机译:合成了SmTe1.84,并通过单晶技术研究了晶体结构。子结构与LaTe2-x是等结构的,其中波纹状的盐岩盐LaTe平板与碲平面方格交替出现。 SmTe1.84的子结构是四方反Cu2Sb型,其上层结构是四方子电池的根5x根5。上层结构是四边形,具有P4(2)/ n对称性,a = 9.709(1)埃,c = 18.007(7)埃。 Te片中同时存在有序和无序的缺陷。获得的上部结构由Lee和Foran建议的三种可能的稳定溶液组成,并且所有三种溶液都在单晶中发现。电阻率对温度的依赖性表明SmTe1.84是半导体的,这似乎是由于结构调制所致。从温度和离子半径比的角度讨论了SmTen(n = 1-2)其他相的结构稳定性。 (C)1998年学术出版社。 [参考:26]

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