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Hydrophilic TiO2 nanowires prepared on Ti5Si3 layer by chemical vapour deposition

机译:化学气相沉积法制备TiO2纳米线在Ti5Si3层上

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摘要

Here we report a self-induced catalyst-free preparation of TiO2 nanowires by APCVD. High-density single-crystalline hydrophilic TiO2 nanowires have been successfully prepared on a Ti5Si3 layer by chemical vapour deposition at 720 degrees C using 10 SCCM O-2 for 120 min, using SiH4, TiCl4, and O-2 as precursors. The nanowires are approximately 2-5 mu m long, the diameter is about 20-40 nm. The TiO2 nanowires grow along the 001 direction of the tetragonal rutile TiO2 crystal from the bottom, with the tip being pushed upwards. The growth process can be defined as a self-induced growth. The 432 and 463 nm band of TiO2 nanowires assigned to self-trapped excitons and OVs, which is beneficial for the hydrophilic property of the nanowires. The contact angle of TiO2 nanowires after ultraviolet irradiation is low (5.1 degrees), exhibiting excellent hydrophilic property.
机译:本文报道了一种通过APCVD制备TiO2纳米线的自诱导无催化剂方法。以SiH4、TiCl4和O-2为前驱体,在720°C下以10 SCCM O-2化学气相沉积120 min,成功制备了高密度单晶亲水性TiO2纳米线。纳米线长约2-5μm,直径约20-40nm。TiO2纳米线从底部沿四方金红石型TiO2晶体的[001]方向生长,尖端被向上推。生长过程可以定义为自我诱导的生长。TiO2纳米线的432和463 nm波段被分配给自捕获激子和OVs,有利于纳米线的亲水性。TiO2纳米线在紫外线照射后的接触角较低(5.1度),表现出优异的亲水性。

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