首页> 外文期刊>International Journal of Radiation Biology: Covering the Physical, Chemical, Biological, and Medical Effects of Ionizing and Non-ionizing Radiations >Correlation between mitotic delay and aberration burden, and their role for the analysis of chromosomal damage.
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Correlation between mitotic delay and aberration burden, and their role for the analysis of chromosomal damage.

机译:有丝分裂延迟与畸变负担之间的相关性及其在分析染色体损伤中的作用。

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摘要

The aim was to investigate further the relationship between radiation-induced mitotic delay and the expression of chromosome damage in V79 cells. Recently published data on the time-course of chromosome aberrations in V79 first-cycle metaphases after exposure to 10.4 MeV u(-1) Ar ions (LET = 1226 keV microm(-1)) were supplemented and reanalysed. A statistical analysis of the distribution of aberrations among cells was performed. Furthermore, cells were grouped into subpopulations carrying 0, 1 -2, 3-4, 5- 6 and 7 or more aberrations. Then, based on the mitotic index, the flux of each subgroup through the first mitosis was determined and the average entrance time to mitosis was estimated. For comparison, the flux of aberrant V79 cells generated by X-irradiation was analysed. Analysis of the Ar ion data revealed that the flux of each subpopulation through the first mitosis is strongly affected by its aberration burden, i.e. a positive correlation between the mitotic delay and the number of aberrations carried by a cell was observed. The distribution of aberrations among cells could be well described by Neyman-type A statistics; the corresponding fit parameters also reflect the damage-dependent mitotic delay. Interestingly, comparison of the flux of Ar ion and X-ray-irradiated V79 cells through mitosis revealed (1) that a direct correlation exists between the number of aberrations carried by a cell and its average entrance time to mitosis, and (2) that this effect is independent of the linear energy transfer. The role of these observations for radiation cytogenetics is discussed.
机译:目的是进一步研究辐射诱导的有丝分裂延迟与V79细胞染色体损伤表达之间的关系。最近发布的数据补充并重新分析了暴露于10.4 MeV u(-1)Ar离子(LET = 1226 keV microm(-1))后V79第一周期中期染色体畸变的时程。对细胞之间的像差分布进行统计分析。此外,将细胞分组为携带0、1-2、3-4、5-6和7个或更多个像差的亚群。然后,基于有丝分裂指数,确定每个亚组通过第一个有丝分裂的通量,并估计平均有丝分裂进入时间。为了比较,分析了X射线照射产生的异常V79细胞的通量。对Ar离子数据的分析表明,每个子种群通过第一个有丝分裂的通量受其畸变负担的强烈影响,即观察到有丝分裂延迟与细胞携带的畸变数之间呈正相关。细胞内像差的分布可以通过内曼A型统计很好地描述。相应的拟合参数也反映了损伤相关的有丝分裂延迟。有趣的是,比较Ar离子和X射线照射的V79细胞通过有丝分裂的通量,发现(1)细胞携带的像差数与平均进入有丝分裂的时间之间存在直接的关系,(2)这种效应与线性能量传递无关。讨论了这些观察对于放射细胞遗传学的作用。

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