Annealing effects on transparent conducting properties of amorphous ZnO-In2O3 films

摘要

Structural and transparent conducting properties of amorphous Zn-In-O films deposited by simultaneous sputtering of ZnO and In2O3 targets facing each other were reviewed. Post-annealing under the reductive gas flow was effective on improving unevenness of the amorphous films. [References: 10]