首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >FAILURE ANALYSIS OF A SEMICONDUCTOR PACKAGING LEADFRAME USING THE SIGNAL PROCESSING APPROACH
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FAILURE ANALYSIS OF A SEMICONDUCTOR PACKAGING LEADFRAME USING THE SIGNAL PROCESSING APPROACH

机译:基于信号处理方法的半导体包装引线框架失效分析

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This paper presents a durability analysis of two types of copper leadframe, i.e. the un-oxidised leadframe and the oxidised leadframe. Both leadframe types were used in the fabrication process of a Quad Flat No-Lead (QFN) package, which can be said as a recent type of the 3D stacked die semiconductor package. This study involved the durability test and analysis on QFN packages when these packages were subjected under constant cyclic loadings. In order to perform the cyclic test, the procedure of the three-point cyclic bending test has been employed on the packages. In addition, a strain gauge which was connected to the dynamic data acquisition system was used for each tested QFN package for determining the response of the captured cyclic strain signal. It has been found that the variable amplitude pattern of signal response has been obtained during the constant cyclic test. The obtained response signals for both type of leadframe were then analysed using the approaches of signal processing technique, which is relatively new in this field. The collected response signal were analysed using the normal statistical methods, the Power Spectrum Density (PSD) calculation and also the time-frequency localization analysis. From the detail signal analysis, it has been found that the un-oxidised leadframe showed a lower range of strain response compared to the oxidised leadframe, indicating higher lifetime. As a result, this finding lead to the durability conclusion, for which the un-oxidised leadframe has more durability effects and it also has higher lifetime compared to the oxidised leadframe. Finally, a micro-crack phenomenon at the epoxy interface between the die and the leadframe was also observed for the QFN package with the oxidised leadframe.
机译:本文介绍了两种铜引线框架的耐久性分析,即未氧化的引线框架和氧化的引线框架。两种引线框类型都用于四方扁平无铅(QFN)封装的制造过程,该封装可以说是3D堆叠裸片半导体封装的最新类型。这项研究涉及QFN封装在恒定循环载荷下的耐久性测试和分析。为了进行循环测试,在包装上采用了三点循环弯曲测试的程序。另外,连接到动态数据采集系统的应变仪用于每个测试的QFN封装,以确定所捕获的循环应变信号的响应。已经发现在恒定循环测试期间已经获得了信号响应的可变幅度模式。然后使用信号处理技术的方法对两种引线框获得的响应信号进行分析,这在该领域是相对较新的。使用常规统计方法,功率谱密度(PSD)计算以及时频本地化分析对收集到的响应信号进行分析。从详细的信号分析中发现,未氧化的引线框架相比于氧化的引线框架显示出较低的应变响应范围,表明使用寿命更长。结果,该发现导致耐久性结论,与氧化的引线框架相比,未氧化的引线框架具有更大的耐久性效果,并且还具有更长的寿命。最后,对于带有氧化引线框的QFN封装,还观察到了管芯和引线框之间的环氧树脂界面处的微裂纹现象。

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