DEPENDENCE OF NON-ABELIAN MATRIX BERRY PHASE OF ASEMICONDUCTOR QUANTUM DOT ON GEOMETRIC PROPERTIES OF ADIABATIC PATH

摘要

A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.