Suppression of silicon nanostructure growth by medium energy nitrogen ion implantation

摘要

A novel nanofabrication technology to produce dense arrays of silicon nanowhiskers up to 20 nm high has been developed. This rapid and simple technology employs electron beam rapid thermal annealing (EB-RTA) of untreated silicon. Pre-implantation of the silicon substrate with nitrogen at low energy (5 keV) has been shown to suppress the formation of these nanostructures. In this paper we demonstrate identical silicon nanostructure growth syppression when produced following nitrogen ion implantation at 50 keV and 100 keV. Specimens were implanted at room temperature and subsequently annealed at 1000℃ for 15 s (temperature gradient 5℃s{sup}(-1)). Specific results obtained from AFM and NRA analysis are discussed highlighting the possibility of silicon nanowhisker growth control using nitrogen ion implantation.