First physical model of human tissue skin based memristors and their network

摘要

Exploratory human tissue skin (HTS)-based memristors and their networks (two in series/parallel combination) with essential memristance characteristics are presented. Exploratory effects of variables viz. applied emf E +/-, memristor forming probe distance (d), size and shape of probes and their polarisation (with respect to finger alignment), on resistance R variation with applied emf E+/-, R retainablility with elapsed time, and charge Q variation with time for continuous flow of applied current are studied and depicted in brief. Applications in bio-electronics and bio-medical electronics are envisaged.