Terahertz Quantum-Cascade Laser Based on the Resonant-Phonon Depopulation Scheme

摘要

We have designed GaAs/Al_(0.15)Ga_(0.85)As multilayer heterostructure (MH) with diagonal transitions and optimized oscillator strength - 0.425. We investigate the dependence of the MH energy band profile on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions. Furthermore, we develop a technique for the fabrication of THz QCL with double metal waveguide via low-temperature In-Au wafer bonding followed by substrate removal. Inductively coupled plasma reactive ion etching in BCl_3/Ar at 15:15 sccm has been used to obtain ridge structure of various widths with vertical sidewalls.