MgO-mixed Ba_(0.6)Sr_(0.4)TiO_(3) bulk ceramics and thin films for tunable microwave applications

摘要

The dielectric properties of Ba_(0.6)Sr_(0.4)TiO_(3) (BST) and 1.0, 20.0, 40.0, and 60.0 wt MgO-mixed BST bulk ceramics and thin films were investigated for tunable microwave applications. The effects of MgO mixing with BST on BST phase transitions were examined. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. Mg-substituted BST and MgO-mixed phases exhibit depressed and broadened BST phase transition peaks, resulting in decreased dielectric constants and dielectric losses at room temperature. BST and 1.0, 20.0, 40.0, and 60.0 wt MgO-mixed BST thin films (～0.3 μm thick) were deposited on (100) MgO single-crystal substrates at 750℃ in an oxygen ambient pressure of 200 mTorr by pulsed laser deposition. The MgO-BST composite thin films showed a relatively high dielectric Q (=1/tan δ) compared to the pure BST and Mg-substituted BST thin films while retaining useful dielectric tuning.