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首页> 外文期刊>IEEE journal of selected topics in quantum electronics: A publication of the IEEE Lasers and Electro-optics Society >25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)
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25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)

机译:25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)

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摘要

We have demonstrated high-performance broad-area single-emitter lasers with window structure fabricated by newly developed impurity-free vacancy disordering (IFVD) technique. A very high pulse output power of 25 W was obtained in 100-$mu$m wide lasers without facet degradation.

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