Direct observation of the composition ofAandBlcub;111rcub; faces of GaP by using xhyphen;ray photoemission

摘要

Xhyphen;ray photoemission from Ga 2p3/2electrons was used to investigate the two polar lcub;111rcub; faces of a polished, singlehyphen;crystal GaP wafer. It is shown directly by examining, for the first time, the contributions to the photoemission from electrons involved in Gandash;Ga, Gandash;P, and Gandash;O bonds, that one of these faces consists solely of Ga atoms and the reverse face solely of P atoms. The same experiments on both faces of a similar lcub;100rcub; wafer showed that both lcub;100rcub; faces are the same.