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Ferroelectric switching mechanism in SrBi_(2)Ta_(2)O_(9)

机译:Ferroelectric switching mechanism in SrBi_(2)Ta_(2)O_(9)

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摘要

The ferroelectric switching mechanism in strontium bismuth tantalate SrBi_(2)Ta_(2)O_(9) (SBT) has been studied using in situ transmission electron microscopy observations of the nucleation and growth of polarization domains, such as 180° and 90° domains. Thank to this high density of the antiphase boundary (APB), a switching mechanism in SBT based on the nucleation of new polarization domains at APBs as well as the electrode interfaces put forward and the fatigue-free behavior of SBT with a platinum electrode is explained.

著录项

  • 来源
    《Applied physics letters》 |2001年第7期|1015-1017|共3页
  • 作者单位

    National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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