Lasing wavelength of an asymmetric double quantum well laser diode

摘要

It is demonstrated that in an asymmetric coupled GaAs double quantum well structure, we are able to choose a lasing wavelength out of at least four quantum state transitions by cavity loss control. The assignments of the observed lasing transitions are determined by photoluminescence measurement for the laser wafer, as well as by calculations using an isolated potential well model. We propose that one can realize widehyphen;range wavelength tuning and multistep wavelength switching functions by modifying the twohyphen;dimensional density of states.