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Connection between sources formalism and correlation formalism for transport noise: Application to injection diodes

机译:Connection between sources formalism and correlation formalism for transport noise: Application to injection diodes

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摘要

The connection between the sources formalism and the correlation formalism for fluctuations in transport processes is reinvestigated, with special emphasis on terms resulting from the boundary conditions. For fluctuations in vector quantities, like the electric field, the conditions on the tensor Greenrsquo;s functions, necessary for the surface terms to vanish, are discussed. They are not satisfied for transport in threehyphen;dimensional injection diodes, in which transverse diffusion is neglected. A pseudoscalar conversion analysis for the radial Greenrsquo;s function leads to an extended correlation formalism expression, which yields exact agreement with the sources formalism results.

著录项

  • 来源
    《journal of applied physics 》 |1976年第2期| 768-771| 共页
  • 作者

    K. M. van Vliet; G. Blasquez;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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