The electrical properties of BaTiO3doped with Sb have been studied. The nature of variation of #x2208; and tan #x3b4; with temperature in this material shows that, under the doped conditions, the mechanism of polarization changes from spontaneous to that of relaxation after curie temperature. This supposition is also verified from the study of variation of permittivity with different levels of applied r.f. power at temperatures higher than that of curie. Further, the dielectric hysteresis loops of this material corresponding to various applied voltages were also studied both at a temperature below curie and a temperature above curie. The loops corresponding to the temperature below that of curie showed saturation while those corresponding to the temperature above curie did not show saturation, thus giving another proof of this supposed existence of relaxation polarization in this doped material at that temperature.
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