Phase diagram calculations for InuGa1minus;uPvAs1minus;vlattice matched to (111minus;B) InP, in the temperature range 600ndash;660thinsp;deg;C

摘要

Quaternary layers have been grown by near equilibrium liquidhyphen;phase epitaxy (LPE) at 621 deg;C over the whole range of compositions that lattice match (111hyphen;B) InP and modelling of this system is reported. Comparison of experimental results at 621 deg;C and those of other workers, with phase diagram calculations made with measured binary and ternary interaction parameters, however, show large discrepancies forv0.5. A modification of the conventional model, in order to fit the experimental data, as a convenient interpolation scheme, is proposed and discussed. The predictions of this modified model are in good agreement with the experiment.