Transient spectroscopy of deep levels in thin semiconductor films

摘要

Characterization of deep levels in thinhyphen;film semiconductors by capacitive pulse transient spectroscopy has been analyzed and verified by measurement. Numerical calculations show that highly resistive thin films create a degradation of signal and possible sign inversion of the signal. Experiments on silicon on insulator and molecular beam epitaxy GaAs Schottky barrier capacitors verify the calculated signal deviation.