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Amorphous diamond-like carbon film prepared by pulsed laser deposition with application of pulsed negative bias voltage

机译:脉冲激光沉积和脉冲负偏置电压制备的非晶类金刚石碳膜

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摘要

Amorphous diamond-like carbon films were prepared by pulsed laser deposition with a synchronized application of pulsed negative bias voltage to the substrate. A beam from a Nd:yttrium-aluminum-garnet laser (1064 nm) was radiated to a graphite target at a laser fluence of 10 J/cm(2). The negative bias voltage was changed from 0 to 10 kV at a repetition rate of 10 Hz. The film was deposited on a Si (111) substrate at a chamber pressure of 5 x 10(-5) Torr for 120 min. The effects,of bias voltage on the structure of the film were discussed on the basis of the measured deposition rate, Raman spectra, refractive index, dynamic hardness, and surface roughness. The effect of self-sputtering on deposition rate was observed at a negative bias voltage above 0.6 kV. The application of bias voltage increased the fraction of sp(3) configuration in the film and made the film surface smoother. In particular, the application of 3 kV gave the largest fraction of sp(3) bonding, and formed the hardest and smoothest film. Bias voltage above 5 kV, however, drastically reduced the hardness of the film. (C) 2001 American Institute of Physics. References: 9
机译:采用脉冲激光沉积制备非晶类金刚石碳膜,同时在衬底上同步施加脉冲负偏置电压。来自Nd:钇-铝-石榴石激光器(1064 nm)的光束以10 J/cm(2)的激光密度辐射到石墨靶。负偏置电压从0变为10 kV,重复频率为10 Hz。将薄膜在 Si (111) 衬底上以 5 x 10(-5) Torr 的腔室压力沉积 120 分钟。在测得沉积速率、拉曼光谱、折射率、动态硬度和表面粗糙度的基础上,讨论了偏置电压对薄膜结构的影响。在0.6 kV以上的负偏置电压下观察到自溅射对沉积速率的影响。偏置电压的施加增加了薄膜中sp(3)构型的比例,使薄膜表面更加光滑。特别是,3 kV的应用使sp(3)键合的比例最大,并形成了最坚硬和最光滑的薄膜。然而,高于 5 kV 的偏置电压会大大降低薄膜的硬度。(C) 2001年美国物理研究所。[参考资料: 9]

著录项

  • 来源
    《Journal of Applied Physics》 |2001年第3期|1938-1941|共4页
  • 作者单位

    Kyoto Univ, Grad Sch Engn, Dept Chem Engn, Sakyo Ku, Kyoto 6068501, Japan, .;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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