Low Distortion GaN Power Amplifier Technology for L/S band Applications

摘要

This paper describes design and performance of GaN power amplifier for L/S-band applications. Moreover, theoretical approach of low distortion methods and eliminating memory effects at high voltage operation are described. The developed GaN amplifier demonstrated 370W peak power at 2.14GHz WCDMA signal. The Power amplifier also delivered low intermodulation of -50dBc with low asymmetry ratio after DPD linearization.