Schottky emission in thinminus;film sandwich structures

摘要

Thin metalminus;insulatorminus;metal structures have been studied for a number of years. The interfacial barrierminus;controlled conduction mechanisms are tunneling and Schottky emission. A simple method of analyzing the currentminus;voltage characteristics for such a structure when Schottky emission is the dominant conduction mechanism is given utilizing the entire infinite series resulting from the image charge modification to the barrier.