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Aberration-corrected scanning transmission electron microscopy study of ?'-like precipitates in an Al-Mg-Ge alloy

机译:像差校正扫描透射电子显微镜研究?Al-Mg-Ge合金中的类似沉淀物

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摘要

Precipitates in an Al-Mg-Ge alloy similar to the ?' phase in Al-Mg-Si alloys were investigated using qualitative and quantitative aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM). The needle-shaped p'-Ge precipitates are coherent with the Al matrix along the needle direction which is parallel to a (00 1)_(Al) direction, as well as one direction in the cross-section plane that is parallel to a _(Al) direction. This is linked to a smaller lattice parameter in the needle cross-section plane than that of coarser, less coherent ?' precipitates in Al-Mg-Si alloys, despite Ge having a larger atomic radius than Si. Quantitative HAADF STEM results show that the nominal Ge columns of the ?'-Ge precipitates are not fully occupied by Ge, the intensity of these columns being consistent with an Al concentration of 30 ± 10, or a vacancy concentration of 20 ± 10. The coherent interface is atomically smooth, but with matrix columns containing Ge spaced periodically along the interface.
机译:采用定性和定量像差校正高角度环形暗场扫描透射电子显微镜(HAADF STEM)研究了Al-Mg-Ge合金中与Al-Mg-Si合金中相似的析出物。针状p'-Ge析出物沿平行于(00 1)_(Al)方向的针状方向与Al基质相干,在平行于_(Al)方向的横截面上也与Al基质相干。这与针横截面平面中的晶格参数比Al-Mg-Si合金中较粗、相干性较差的“析出物更小有关,尽管Ge的原子半径大于Si。 定量HAADF STEM结果表明,标称Ge柱的标称Ge柱的?-Ge沉淀物未被Ge完全占据,这些柱子的强度与30±10%的Al浓度或20±10%的空位浓度一致。相干界面在原子上是光滑的,但包含 Ge 的矩阵列沿界面周期性地间隔。

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