Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates

摘要

Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed withthe goal of producing (Si1-xGex)1-yMny with a high ferromagnetic transition temperature (Tc ). Thedouble-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mnimplantedand annealed Si1-xGex thin films were single crystalline. Themagnetization curves as functionsof the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealedSi1-xGex thin films, and the magnetization curves as functions of the temperature showed that the Tcvalue was above 300 K. These results indicate that the formed (Si1-xGex)1-yMny thin films hold promisefor potential applications in Si-based spintronic devices operating at room temperature.