首页> 外文期刊>Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter >The broadband NIR emission properties of Bi doped La _2O _3-Al _2O _3-SiO _2 glass
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The broadband NIR emission properties of Bi doped La _2O _3-Al _2O _3-SiO _2 glass

机译:The broadband NIR emission properties of Bi doped La _2O _3-Al _2O _3-SiO _2 glass

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摘要

Bi _2O _3 doped 65SiO _2-20Al _2O _3-15La _2O _3 (in mole) glasses were prepared by the traditional melting-quenching method. The spectroscopic properties and mechanism of NIR broadband emission in these glasses were investigated in this work. Three excitation wavelengths of 500, 700 and 800 nm were used to test emission spectra. The emission band under 500 nm excitation can be regarded as combination of emission bands under 700 and 800 nm excitation. 2.0 mole is found to be the optimal Bi _2O _3 doping level in this glass. Under 500 nm excitation its emission peak, FWHM and lifetime of emission band are 1160 nm, 300 nm and 569 μs, respectively. The longest fluorescent lifetime reaches 620 μs under 700 nm excitation. The valence state of Bi in these glasses is suggested to be lower than 3 by X-ray photoelectron spectroscopy. With the help of energy matching, we infer that both Bi ~0 and Bi centers are responsible for the NIR fluorescence of Bi _2O _3 doped 65SiO _2-20Al _2O _3-15La _2O _3 glass.

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