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Effect of neodymium (Nd) doping on the dielectric and ferroelectric characteristics of sol-gel derived lead zirconate titanate (53/47) thin films

机译:钕(Nd)掺杂对溶胶-凝胶衍生锆钛酸铅(53/47)薄膜介电和铁电特性的影响

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摘要

The results of the studies on the effect of rare earth Nd doping on the phase formation behavior and electrical properties of sol-gel derived Pb_(1.05)(Zr_(0.53)Ti_(0.47))O_(3) (PZT) thin films are presented. The perovskite phase is obtained up to 5 at. doping and beyond that pyrochlore phase was found to coexist with the perovskite phase in all the films. The transition temperature of undoped lead zirconate titanate (PZT) film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor-type behavior and a diffuse phase transition, similar to that observed in relaxor materials. The introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO_(3) lattice, which causes the observed dielectric relaxation. Efforts were made to isolate the irreversible component contributions in low field dielectric and high field polarization switching behavior.
机译:介绍了稀土钕掺杂对溶胶-凝胶衍生Pb_(1.05)(Zr_(0.53)Ti_(0.47))O_(3)(PZT)薄膜相形成行为和电性能影响的研究结果.钙钛矿相的获得高达 5 at。在所有薄膜中,发现掺杂百分比及超过该热绿石相与钙钛矿相共存。发现未掺杂锆钛酸铅(PZT)薄膜的转变温度随着Nd掺杂而降低。Nd掺杂薄膜还表现出典型的弛豫型行为和漫反射相变,类似于在弛豫材料中观察到的相变。将 Nd 引入 PZT 晶格可能会在 ABO_(3) 晶格的 B 位点引入无序,从而导致观察到的介电弛豫。人们努力隔离低场介电和高场极化开关行为中的不可逆成分贡献。

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