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Design of 5.2-GHz Low Noise Amplifier for Wireless LAN

机译:用于无线局域网的5.2GHz低噪声放大器的设计

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This paper presents 5.2-GHz Low Noise Amplifier (LNA) for 802.11a wireless local area network (WLAN) application. The proposed circuit is fabricated using 0.18μm SiGe HBT BiCMOS technology, and it is powered by 1V supply. To increase voltage gain, this LNA has two-stage architecture. The bias circuit has band-gap reference for low-power and low-voltage application. The proposed LNA showed low power consumption of 6.5mW, high voltage gain of approximately 26dB, low noise figure of approximately 2.6dB, high IIP3 of -5dBm, and small chip size of 1.1×1.2mm~2.
机译:本文介绍了用于802.11a无线局域网(WLAN)应用的5.2 GHz低噪声放大器(LNA)。该电路采用0.18μmSiGe HBT BiCMOS技术制造,并由1V电源供电。为了增加电压增益,该LNA具有两级架构。偏置电路具有带隙基准,适用于低功率和低压应用。拟议的LNA具有6.5mW的低功耗,约26dB的高电压增益,约2.6dB的低噪声系数,-5dBm的高IIP3和1.1×1.2mm〜2的小芯片尺寸。

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