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High pressure structural phase transition in AgGaTe2

机译:AgGaTe2中的高压结构相变

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摘要

Frominsitudiffraction measurements of synchrotron produced x radiation, we have found that AgGaTe2transforms from the tetragonal, chalcopyrite structure to a face‐centered cubic structure at 4.0±0.5 GPa. The resistivity shows a minimum near this pressure, but the material retains its semiconducting nature.
机译:通过对同步加速器进行X辐射的局部衍射测量,我们发现AgGaTe2在4.0±0.5 GPa时从四方黄铜矿结构转变为面心立方结构。电阻率在接近该压力时显示最小值,但材料保留了其半导体性质。

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