Effect of light soaking on the shorthyphen;wavelength photoresponse in hydrogenated amorphous silicon

摘要

The spectrum of the values of eegr;mgr;tgr;, the product of quantum efficiency, lifetime, and mobility of photogenerated carriers, has been obtained in the wavelength range 300ndash;900 nm, before and after light soaking. It has been shown that in the annealed state, these values are nearly independent of wavelength as well as film thickness. The values of eegr;mgr;tgr; have been found to decrease more drastically in the shorthyphen;wavelength region after light soaking, similarly to that observed after moisture adsorption. Changes in band bending are not likely to be the cause of the decrease in response as the dark conductivity does not change on light soaking. The implications of the result are discussed.