Electrohyphen;optic effect in semiconductor superlattices

摘要

Changes of index of refraction of semiconductor superlattices due to electric field are studied theoretically. A parabolic band effectivehyphen;mass approximation is used for the conduction, heavyhyphen;hole, and lighthyphen;hole bands. Excitonic effects are considered for wide barrier superlattices (or multiple quantum wells) and are found to substantially enhance the electrohyphen;optic effect near the onset of the excitonic absorption.