n-Type Organic Field-Effect Transistors with High Electron Mobilities Based on Thiazole-Thiazolothiazole Conjugated Molecules

摘要

Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized and characterized by differential scanning calorimetry,X-ray single crystal analysis,UV-vis absorption spectroscopy,cyclic voltammetry,field-effect transistor(FET)characteristics,and X-ray diffraction.The FET characteristics of thiazole-thiazolothiazole derivatives are strongly dependent on the nitrogen positions.The derivative with a 2-(4-trifluoromethylphenyl)thiazole unit afforded a high performance FET device that showed a high electron mobility pf 0.12 cm~2 V~(-1)s~(-1)with a bottom contact configuration.Moreover,with a top contact configuration,high electron mobilities of 0.24-0.64 cm~2 V~(-1)s~(-1)and low threshold voltages of 18-24 V depending on the surface modification were achieved.The relationship between molecular structure,molecular packing,electrical characteristics,film structure,and FET performance were investigated.